參數(shù)資料
型號: Am29LV160MT90
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位),3.0伏的MirrorBit只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 34/60頁
文件大?。?/td> 1849K
代理商: AM29LV160MT90
32
Am29LV160M
25974B0 August 11, 2003
P r e l i m i n a r y
Write Operation Status
The device provides several bits to determine the status of a write operation:
DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table
12
and the following subsections
describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method
for determining whether a program or erase operation is complete or in progress.
These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final WE# pulse in the program
or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the com-
plement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a pro-
gram address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 μs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.
When the Embedded Erase algorithm is complete, or if the device enters the
Erase Suspend mode, Data# Polling produces a “1” on DQ7. This is analogous to
the complement/true datum output described for the Embedded Program algo-
rithm: the erase function changes all the bits in a sector to “1”; prior to this, the
device outputs the “complement,” or “0.” The system must provide an address
within any of the sectors selected for erasure to read valid status information on
DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 μs, then the
device returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data,
it can read valid data at DQ7–DQ0 on the
following
read cycles. This is because
DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is
asserted low.
Figure 19
, Data# Polling Timings (During Embedded Algorithms),
in the
“AC Characteristics”
section illustrates this.
Table
12
shows the outputs for Data# Polling on DQ7.
Figure 7
shows the Data#
Polling algorithm.
相關(guān)PDF資料
PDF描述
AM29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MT100PCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB30EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB50FI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
AM29LV160MB50PCI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV200BB-120EC 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48
AM29LV200BB-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP
AM29LV200BB-90FC 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory
AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述: