參數資料
型號: Am29LV400B-90RWACB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導扇區(qū)閃存
文件頁數: 19/40頁
文件大?。?/td> 516K
代理商: AM29LV400B-90RWACB
Am29LV400
26
PREL I M I N AR Y
AC CHARACTERISTICS
Read Operations
Notes:
1. Not 100% tested.
2. See Figure 10 and Table 7 for test specifications.
Parameter
Description
Speed Option
JEDEC
Std
Test Setup
-90R
-100
-120
-150
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
90
100
120
150
ns
tAVQV
tACC
Address to Output Delay
CE# = VIL
OE# = VIL
Max
90
100
120
150
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
90
100
120
150
ns
tGLQV
tOE
Output Enable to Output Delay
Max
40
50
55
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
30
40
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
30
40
ns
tOEH
Output Enable
Hold Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Min
0
ns
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tOE
0 V
RY/BY#
RESET#
tDF
tOH
20514C-16
Figure 12.
Read Operations Timings
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