參數(shù)資料
型號: Am29LV400B-90RWACB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 24/40頁
文件大小: 516K
代理商: AM29LV400B-90RWACB
Am29LV400
30
PREL I M I N AR Y
AC CHARACTERISTICS
OE#
WE#
CE#
VCC
Data
Addresses
tDS
tAH
tDH
tWP
PD
tWHWH1
tWC
tAS
tWPH
tVCS
555h
PA
Read Status Data (last two cycles)
A0h
tGHWL
tCS
Status
DOUT
Program Command Sequence (last two cycles)
RY/BY#
tRB
tBUSY
tCH
PA
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
20514C-20
Figure 16.
Program Operation Timings
相關(guān)PDF資料
PDF描述
Am29LV400B-90RWAE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400B-90RWAEB CAP 0.47UF 50V +50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
Am29LV400BB70RWACB Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance:+50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400BB70RWAE 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400BB70RWAEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV400BB-120EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin TSOP
AM29LV400BB-120EI 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 48-Pin TSOP
AM29LV400BB-120SC 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 44-Pin SOP
AM29LV400BB-120WAI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin FBGA
AM29LV400BB-55RWAI 制造商:Spansion 功能描述:SPZAM29LV400BB-55RWAI 4M FLASH EOL150606