參數(shù)資料
型號： AM29PDLI27H63PCI
廠商： Spansion Inc.
英文描述： 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： 128兆位（8米× 16位），3.0伏的CMOS只，頁面模式同步讀/寫閃存與增強VersatileIO控制記憶
文件頁數(shù)： 66/68頁
文件大?。?/td> 750K
代理商： AM29PDLI27H63PCI
64
Am29PDL127H
June 30, 2003
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY
Revision A (September 30, 2002)
Initial release.
Revision A+1 (October 29, 2002)
Distinctive Characteristics
Added V
IO
option at 1.8 V and 3 V I/O to Enhanced V
IO
Control section.
Modified wording of WP#/ACC (Write Protect/Acceler-
ation) Input.
Product Selector Guide
Modified the Product Selector Guide Table.
Ordering Information
Changed package type from TBD to VK.
Added VKI to Valid combinations table.
Added Process Technology to Standard Product sec-
tion.
Revised Order Numbers and Package Markings to re-
flect speed option changes.
Global
Changed 55 speed option to 53, changed 65 speed
option to 63 and 68.
Table 1. Am29PDL127H Device Bus Operations
Added note #2.
Requirements for Reading Array Data
Reworded Page Mode Read section
Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph
from, “...the autoselect mode.” to “...reading array
data.”
Changed CFI website address.
Command Definitions
Changed wording in last sentence of first paragraph
from, “...resets the device to reading array data.” to
...”may place the device to an unknown state. A reset
command is then required to return the device to
reading array data.”
Customer Lockable: SecSi Sector NOT
Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text
and figure 3.
SecSi Sector Flash Memory Region and Enter
SecSi Sector/Exit SecSi Sector Command
Sequence
Added notes, “
Note that the ACC function and unlock
bypass modes are not available when the SecSi sector
is enabled.
”
Sector Erase Command Sequence and Chip Erase
Command Sequence
Added “
Note that the SecSi Sector, autoselect, and
CFI functions are unavailable when a [program/erase]
operation is in progress.
”
Table 13. Memory Array Command Definitions
Changed the first address of the unlock bypass reset
command sequence from BA to XXX.
CMOS Compatible
Added I
LR
parameter to table.
Deleted I
ACC
parameter from table.
Revision A+2 (January 24, 2003)
Ordering Information
Corrected the package marking for package type PC
on 83 and 88 speed options.
Revision A+3 (June 20, 2003)
Distinctive Characteristics
Changed the active read current to 55 mA.
Product Selector Guide
Added row to table to expand speed options and allow
for another V
CC
range.
Revision A+4 (June 30, 2003)
Product Selector Guide
Corrected typo in the V
CC
,V
IO
range for the 53 speed
option.
相關PDF資料
PDF描述
AM29PDLI27H63PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDLI27H88PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDLI27H88VKI 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDLI27H 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDLI27H53PCI 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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