- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366528 > AM29SL160CB-100EDN (Advanced Micro Devices, Inc.) 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29SL160CB-100EDN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 29/52頁 |
| 文件大?。?/td> | 1232K |
| 代理商： | AM29SL160CB-100EDN |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當(dāng)前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
November 1, 2004
Am29SL160C
29
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a program or erase operation: DQ2, DQ3,
DQ5, DQ6, DQ7, and RY/BY#.
Table 13, on page 32
and the following subsections describe the functions of
these bits. DQ7 and DQ6 each offer a method for deter-
mining whether a program or erase operation is
complete or in progress. The device also provides a
hardware-based output signal, RY/BY#, to determine
whether an embedded program or erase operation is in
progress or is completed.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Algorithm is in progress
or completed, or whether the device is in Erase Sus-
pend. Data# Polling is valid after the rising edge of the
final WE# pulse in the program or erase command
sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 μs, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 μs, then
the device returns to reading array data. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores
the selected sectors that are protected.
When the system detects DQ7 changes from the com-
plement to true data, it can read valid data at DQ7–
DQ0 on the
following
read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low.
Figure 19, on
page 43
, Data# Polling Timings (During Embedded
Algorithms), in the “AC Characteristics” section illus-
trates this.
Table 13, on page 32
shows the outputs for Data#
Polling on DQ7.
Figure 5, on page 29
shows the Data#
Polling algorithm.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 5.
Data# Polling Algorithm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29SL160CB-100EEN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100EFN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100EIN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100WCCN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100WCDN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29SL160CT-100EIN | 制造商:Advanced Micro Devices 功能描述: |
| AM29SL800DB120WCI | 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29SL800DB90WAD | 制造商:Spansion 功能描述: |
| AM29X305ADC | 制造商:Advanced Micro Devices 功能描述:Microprocessor, 8 Bit, 50 Pin, Ceramic, DIP |
| AM2A016 | 制造商:MAG-LITE 功能描述:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。