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參數(shù)資料
| 型號： | AM29SL160CB-100EDN |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位的CMOS 1.8伏只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 4/52頁 |
| 文件大小： | 1232K |
| 代理商： | AM29SL160CB-100EDN |
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Am29SL160C
November 1, 2004
GENERAL DESCRIPTION
The Am29SL160C is a 16 Mbit, 1.8 V volt-only Flash
memory organized as 2,097,152 bytes or 1,048,576
words. The data appears on DQ0–DQ15. The device is
offered in 48-pin TSOP and 48-ball FBGA packages.
The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This device is
designed to be programmed and erased in-system with a
single 1.8 volt V
CC
supply. No V
PP
is required for program
or erase operations. The device can also be programmed
in standard EPROM programmers.
The standard device offers access times of 90, 100,
120, or 150 ns, allowing microprocessors to operate
without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a
single 1.8 volt power
supply
for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard
. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the
Embedded
Erase
algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits
. After a program or erase cycle
completes, the device is ready to read array data or
accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write operations
during power transitions. The
hardware sector pro-
tection
feature disables both program and erase
operations in any combination of the sectors of
memory. This is achieved in-system or via program-
ming equipment.
The
Erase Suspend
feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to
read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses are stable for a specified amount of time, the
device enters the
automatic sleep mode
. The system
can also place the device into the
standby mode
.
Power consumption is greatly reduced in both modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29SL160CB-100EEN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100EFN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100EIN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100WCCN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| AM29SL160CB-100WCDN | 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| AM29X305ADC | 制造商:Advanced Micro Devices 功能描述:Microprocessor, 8 Bit, 50 Pin, Ceramic, DIP |
| AM2A016 | 制造商:MAG-LITE 功能描述:Bulk |
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