參數(shù)資料
型號(hào): AM29SL160CB-100EFN
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 16兆位的CMOS 1.8伏只超低電壓快閃記憶體
文件頁數(shù): 42/52頁
文件大?。?/td> 1232K
代理商: AM29SL160CB-100EFN
42
Am29SL160C
November 1, 2004
AC CHARACTERISTICS
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18.
Chip/Sector Erase Operation Timings
相關(guān)PDF資料
PDF描述
AM29SL160CB-100EIN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100WCCN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100WCDN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100WCEN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100WCFN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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