參數(shù)資料
型號： AM49DL3208G
英文描述： Am49DL3208G - Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
中文描述： Am49DL3208G -堆疊式多芯片封裝（MCP）的閃存和移動存儲芯片
文件頁數(shù)： 38/62頁
文件大小： 933K
代理商： AM49DL3208G
36
Am49DL3208G
September 19, 2003
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM DC AND
OPERATING CHARACTERISTICS
Notes:
1. T
A
= –40
°
to 85
°
C, otherwise specified.
2. Overshoot: V
CC
+1.0V if pulse width
≤
20 ns.
3. Undershoot: –1.0V if pulse width
≤
20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
5. Stable power supply required 200 μs before device operation.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN
= V
SS
to V
CC
–1.0
1.0
μA
I
LO
Output Leakage Current
CE1#s = V
IH
, CE2s = V
IL
or OE# =
V
IH
or WE# = V
IL
, V
IO
= V
SS
to V
CC
–1.0
1.0
μA
I
CC1
s
Average Operating Current
Cycle time = 1 μs, 100% duty,
I
IO
= 0 mA, CE1#s
≤
0.2 V,
CE2
≥
V
CC
– 0.2 V, V
IN
≤
0.2 V or
V
IN
≥
V
CC
– 0.2 V
3
5
mA
I
CC2
s
Average Operating Current
Cycle time = Min., I
IO
= 0 mA,
100% duty, CE1#s = V
IL
, CE2s =
V
IH
, V
IN
= V
IL
= or V
IH
12
25
mA
V
IL
Input Low Voltage
–0.2
(Note 3)
0.4
V
V
IH
Input High Voltage
2.2
V
CC
+0.2
(Note 2)
V
V
OL
Output Low Voltage
I
OL
= 2.0 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1.0 mA
2.2
V
I
SB
Standby Current (TTL)
CE1#s = V
IH
,
CE2 = V
IL
, Other
inputs = V
IH
or V
IL
CE1#s
=
V
IH
, CE2
=
V
IL:
Other inputs = V
IH
or V
IL:
t
A
= 85
°
C, V
CC
= 3.0 V
CE1#s
=
V
IH
, CE2
=
V
IL:
Other inputs = V
IH
or V
IL:
t
A
= 85
°
C, V
CC
= 3.3 V
0.3
mA
I
SB1
Standby Current (CMOS)
60
μA
I
SB2
Standby Current (CMOS)
85
μA
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