參數(shù)資料
型號(hào)： AM49DL3208G
英文描述： Am49DL3208G - Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
中文描述： Am49DL3208G -堆疊式多芯片封裝（MCP）的閃存和移動(dòng)存儲(chǔ)芯片
文件頁(yè)數(shù)： 47/62頁(yè)
文件大?。?/td> 933K
代理商： AM49DL3208G
September 19, 2003
Am49DL3208G
45
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
OE#
CE#f
Addresses
V
CC
f
WE#
Data
2AAh
SADD
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”.
2. These waveforms are for the word mode.
Figure 22.
Chip/Sector Erase Operation Timings
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