參數(shù)資料
型號： AM49DL3208G
英文描述： Am49DL3208G - Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
中文描述： Am49DL3208G -堆疊式多芯片封裝（MCP）的閃存和移動存儲芯片
文件頁數(shù)： 55/62頁
文件大小： 933K
代理商： AM49DL3208G
September 19, 2003
Am49DL3208G
53
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. WE# = V
IH
.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than t
RC
for continuous periods < 10 μs.
Figure 31.
Pseudo SRAM Read Cycle
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
HZ
CE2s
t
CO2
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