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參數(shù)資料
| 型號： | AMD29DL163DB70PCI |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 24/53頁 |
| 文件大?。?/td> | 1167K |
| 代理商： | AMD29DL163DB70PCI |
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24
Am29DL16xD
July 29, 2002
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does
not
require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 14
shows the address and data requirements for the chip
erase command sequence.
When the Embedded Erase algorithm is complete,
that bank returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. Refer to the Write Operation Status
section for information on these status bits.
Any commands written during the chip erase operation
are ignored. However, note that a
hardware reset
im-
mediately terminates the erase operation. If that
occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations
tables in the AC Characteristics section for parame-
ters, and Figure 19 section for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then
followed by the address of the sector to be erased,
and the sector erase command. Table 14 shows the
address and data requirements for the sector erase
command sequence.
The device does
not
require the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
After the command sequence is written, a sector erase
time-out of 50 μs occurs. During the time-out period,
additional sector addresses and sector erase com-
mands within the bank may be written. Loading the
sector erase buffer may be done in any sequence, and
the number of sectors may be from one sector to all
sectors. The time between these additional cycles
must be less than 50 μs, otherwise erasure may be-
gin. Any sector erase address and command following
the exceeded time-out may or may not be accepted. It
is recommended that processor interrupts be disabled
during this time to ensure all commands are accepted.
The interrupts can be re-enabled after the last Sector
Erase command is written.
Any command other than
Sector Erase or Erase Suspend during the
time-out period resets that bank to reading array
data.
The system must rewrite the command se-
quence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing bank. The system can de-
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See Table 14 for program command sequence.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AMD29DL163DB70WCI | EEPROM |
| AMD29DL163DB90EI | EEPROM |
| AMD29DL163DB90PCI | EEPROM |
| AMD29DL163DB90WCI | EEPROM |
| AMD29DL163DT120EI | EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AMD29DL163DB70WCI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| AMD29DL163DB90EI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| AMD29DL163DB90PCI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| AMD29DL163DB90WCI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| AMD29DL163DT120EI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
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