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參數(shù)資料
| 型號： | AN957 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Measuring HEXFETCharacteristics |
| 中文描述： | 測量HEXFETCharacteristics |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 235K |
| 代理商： | AN957 |
AN-957
(v.Int)
11. Measurement Of HEXFET Power Mosfet Characteristics
Without A Curve Tracer
HEXFET Power MOSFET parameters can be measured using
standard laboratory equipment. Test circuits and procedures for
doing this are described in the following sections, with the IRF630
used as an example. the test arrangement should be varied
appropriately for other devices.
BV
DSS,
Drain-Source Breakdown Voltage
The test circuit is shown in Figure 13. The current source will typically consist of a power supply with an output voltage
capability of about 3 time BV
DSS
in series with a current defining resistor of the appropriate value.
When testing high voltage HEXFET Power MOSFETs it may not be practical or safe to use a supply of 3 times BV
DSS
. In such
cases, another type of constant current source may be used.
V
GS(th)
, Threshold Voltage
The test circuit is shown in Figure 14. The 1 kohm gate resistor is required to suppress potentially destructive oscillations at the
gate. the current source may be derived from a voltage source equal to the gate voltage rating of the HEXFET Power MOSFET
and a series resistor.
V
DS(on)
, On-Resistance
The test circuit is shown in Figure 15. The pulse
width should be 300 microsec at a duty cycle of less
than 2%.
The value quoted is at a junction temperature of 25oC.
R
DS(on)
is calculated by dividing V
DS(on)
by I
D
. Connect
the ground of the gate supply as close to the source
lead as possible.
g
fs
, Transconductance
Connect a 50V power supply
between the device drain and
source, as shown in Figure 16. Use
a current probe to measure ID.
A signal generator operating at low
duty cycle to prevent heating of the
device, is used to obtain 80
microsec pulses of the required
voltage
(V
GS
)
following currents:
to
obtain
the
0.015 x I
D
, 0.05 x I
D
, 0.15 x I
D
, 0.5
x I
D
, and 1.5 x I
D
where I
D
is the
rated value at T
C
= 25oC. Plot a
graph of V
GS
versus I
D
.
The transconductance is equal to the slope of the graph at the appropriatTest circuit for drain on-state voltage
DVM
BV
DSS
S
D
G
250
μ
A
DVM
V
GS(th)
S
D
G
250
μ
A
1K
BV
DSS
S
D
G
I
D
PULSE COMMAND
10V
OSCILLOSCOPE
or DVM
+
-
Figure 13.
Test circuit for BV
DSS
Figure 14.
Test circuit for gate threshold voltage
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