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參數(shù)資料
| 型號(hào)： | AN957 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Measuring HEXFETCharacteristics |
| 中文描述： | 測(cè)量HEXFETCharacteristics |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 235K |
| 代理商： | AN957 |
AN-957
(v.Int)
Figure 19.
Test circuit for transfer capacitance
Turn-on
Time, Rise Time,
Turn-Off
Time, Fall Time
Delay
Delay
Data sheet value
are for a resistive
load, as shown in
Figure 20, as well
as individual data sheets. The gate pulses
should be just long enough to achieve
complete turn-on, with a duty cycle of the
order of 0.1%.
The series resistor is as specifyed in the data
sheet. The definitions of rise, fall and delay
times are given in Figure 21.
Power MOSFETs can switch in nanoseconds. Unless the test circuit is laid-out with RF techniques, the measurements will be
totally unreliable. Switching time measurements frequently amount to a characterization of the test circuit, rather than the device
under test. Gate charge provides a better indication of the switching capability of power MOSFETs.
Q
g
, Q
gs
, Q
gd
Total Gate Charge, Gate-Source Charge, Gate-Drain Charge
The total gate charge has two
components: the gate-source charge
and the gate-drain charge (often
called the Miller charge).
INT-944 gives more details on this
test. Figures 22 and 23 show the test
circuit and waveforms.
From the relationship Q =
∫
i, the
following results are obtained:
25V
10M
LOW
HIGH
CB or
DVM
2000 pF
10:1
S
D
V
DS
V
GS
R
D
R
10V
+
-
TO THE
OSCILLOSCOPE
0.5 x RATED V
DS
t
d(on)
ON DELAY
TIME
t
d
off
OFF DELAY
TIME
t
r
RISE TIME
t
f
FALL TIME
V
DS
V
GS
90%
10%
Figure 20.
Test circuit for switching times
Figure 21. S
witching time waveforms
To Order
Index
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