參數(shù)資料
型號: AO4914
廠商: ALPHA AND OMEGA SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, SOIC-8
文件頁數(shù): 1/9頁
文件大?。?/td> 650K
代理商: AO4914
AO4914
30V Dual N-Channel MOSFET with Schottky Diode
General Description
Product Summary
Q1(N-Channel)
Q2(N-Channel)
VDS= 30V
30V
ID= 8A (VGS=10V)
8A (VGS=10V)
RDS(ON) <20.5m
(VGS=10V)
RDS(ON) <28m
(VGS=4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
SCHOTTKY
VDS = 30V, IF = 3A, VF<0.5V@1A
The AO4914 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the
synchronous MOSFET to boost efficiency further.
SOIC-8
Top View
Bottom View
G2
S2
G1
S1/A
D2
D1/K
Top View
G2
D2
S2
G1
D1
S1
K
A
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
VDS
IFM
TJ, TSTG
°C
A
mJ
Avalanche energy L=0.1mH
C
-55 to 150
TA=70°C
18
Junction and Storage Temperature Range
Power Dissipation
B
2
1.3
PD
TA=25°C
1.3
18
2
30
8
A
±20
V
6.5
40
19
W
V
±20
Absolute Maximum Ratings TA=25°C unless otherwise noted
Max Q1
Drain-Source Voltage
30
Max Q2
Gate-Source Voltage
Units
Parameter
Pulsed Drain Current
C
Continuous Drain
Current
Avalanche Current
C
8
ID
TA=25°C
TA=70°C
6.5
40
19
Parameter
Units
Reverse Voltage
V
Max Schottky
30
A
TA=70°C
Pulsed Diode Forward Current
C
3
2.2
20
Continuous Forward
Current
TA=25°C
IF
W
TA=70°C
Junction and Storage Temperature Range
-55 to 150
°C
2
1.28
Power Dissipation
B
TA=25°C
PD
SOIC-8
Top View
Bottom View
Pin1
G2
S2
G1
S1/A
D2
D1/K
Top View
G2
D2
S2
G1
D1
S1
K
A
Rev 11: Mar. 2011
www.aosmd.com
Page 1 of 9
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO4914_101 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷(TR) 零件狀態(tài):過期 FET 類型:2 個(gè) N 溝道(雙) FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):8A 不同?Id,Vgs 時(shí)的?Rds On(最大值):20.5 毫歐 @ 8A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷(Qg):18nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1
AO4914_11 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode
AO4914A 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4914AL 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AO4914L 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷(TR) 零件狀態(tài):過期 FET 類型:2 個(gè) N 溝道(雙) FET 功能:標(biāo)準(zhǔn) 漏源極電壓(Vdss):30V 電流 - 連續(xù)漏極(Id)(25°C 時(shí)):8A 不同?Id,Vgs 時(shí)的?Rds On(最大值):20.5 毫歐 @ 8A,10V 不同 Id 時(shí)的 Vgs(th)(最大值):2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷(Qg):18nC @ 10V 不同 Vds 時(shí)的輸入電容(Ciss):865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1