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參數(shù)資料
| 型號： | AO4912 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 508K |
| 代理商： | AO4912 |
AO4912
Symbol
Min
Typ
Max Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1
1.5
2
V
ID(ON)
25
A
20
26
TJ=125°C
31.6
38
24.3
31
m
gFS
22
S
VSD
0.78
1
V
IS
3
A
Ciss
590
710
pF
Coss
162
pF
Crss
40
56
pF
Rg
0.2
0.45
0.6
Qg
6.04
7.3
nC
Qgs
1.46
nC
Qgd
2.56
nC
tD(on)
3.7
5.5
ns
tr
3.5
5.5
ns
tD(off)
14.9
22
ns
tf
2.5
4
ns
trr
Body Diode Reverse Recovery time
IF=7A, dI/dt=100A/s
21.2
26
ns
Qrr
Body Diode Reverse Recovery charge IF=7A, dI/dt=100A/s
14.2
21
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=250A, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
A
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250A
On state drain current
VGS=4.5V, VDS=5V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7.0A
m
VGS=4.5V, ID=6.0A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
VDS=5V, ID=7A
Diode Forward Voltage
IS=1A
SWITCHING PARAMETERS
Total Gate Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=2.2,
RGEN=3
VGS=4.5V, VDS=15V, ID=7.0A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
Rev 6: Jan 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4912L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應商器件封裝:8-SO 標準包裝:1 |
| AO4914_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode |
| AO4914A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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