參數(shù)資料
型號: AO8701
廠商: Electronic Theatre Controls, Inc.
英文描述: P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: P通道增強模式場的肖特基二極管晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 125K
代理商: AO8701
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Pulsed Forward Current
B
97
63
75
R
θ
JA
90
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
10s
R
θ
JA
Steady-State
125
75
125
75
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Steady-State
63
-55 to 150
Typ
Maximum Junction-to-Ambient
A
Steady-State
Continuous Forward Current
A
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
t
10s
Parameter
Drain-Source Voltage
-55 to 150
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
P
D
I
D
3
2
40
1.4
1
A
Continuous Drain Current
A
Pulsed Drain Current
B
Schottky reverse voltage
Gate-Source Voltage
Schottky
I
F
90
73
96
Max
°C/W
°C/W
MOSFET
-30
±12
-4.2
-3.5
-30
1.4
1
Junction and Storage Temperature Range
W
30
Power Dissipation
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Rev 1: Oct 2004
Features
V
DS
(V) = -30V
I
D
= -4.2A
R
DS(ON)
< 50m
(V
GS
= 10V)
R
DS(ON)
< 65m
(V
GS
= 4.5V)
R
DS(ON)
< 120m
(V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
=0.5V@1A
General Description
The AO8701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
TSSOP-8
G
S
S
D
A
A
A
K
1
2
3
4
8
7
6
5
G
D
S
A
K
Alpha & Omega Semiconductor, Ltd.
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參數(shù)描述
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AO8801AL 功能描述:MOSFET 2P-CH 20V 4.5A 8TSSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷(TR) 零件狀態(tài):過期 FET 類型:2 個 P 溝道(雙) FET 功能:邏輯電平門 漏源極電壓(Vdss):20V 電流 - 連續(xù)漏極(Id)(25°C 時):4.5A 不同?Id,Vgs 時的?Rds On(最大值):42 毫歐 @ 4.5A,4.5V 不同 Id 時的 Vgs(th)(最大值):900mV @ 250μA 不同 Vgs 時的柵極電荷(Qg):11nC @ 4.5V 不同 Vds 時的輸入電容(Ciss):905pF @ 10V 功率 - 最大值:1.5W 工作溫度:-55°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:8-TSSOP(0.173",4.40mm 寬) 供應(yīng)商器件封裝:8-TSSOP 標(biāo)準(zhǔn)包裝:1