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參數(shù)資料
| 型號： | AP04N70BI-H-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | AP04N70BI-H-HF |
AP04N70BI-H-HF
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
0
10
20
30
40
0
50
100
150
T c , Case Temperature (
o C )
P
D
(W
)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
25
50
75
100
125
150
T c , Case Temperature (
o C )
I
D
,
Dra
in
C
u
rre
nt
(A
)
0.01
0.1
1
10
100
1
10
100
1000
10000
V DS (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP04N70BI-H | 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP04N70BS-H-HF | 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP0504GMT-HF | 23.6 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP05N20GI-HF | 5.8 A, 200 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP05N50EI-HF | 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP04N70BP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP04N70BP-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BP-A_07 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BS-H-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N80I-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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