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參數(shù)資料
| 型號： | AP04N70BI-H-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | AP04N70BI-H-HF |
AP04N70BI-H-HF
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5
0
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS
(th
)
(V
)
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V)
I D =4A
VDS =480V
VDS =400V
VDS =320V
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD (V)
I
S(A
)
T j = 25
o C
T j =150
o C
1
100
10000
1
6
11
16
21
26
31
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP04N70BI-H | 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP04N70BS-H-HF | 4 A, 700 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP0504GMT-HF | 23.6 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP05N20GI-HF | 5.8 A, 200 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP05N50EI-HF | 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP04N70BP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP04N70BP-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BP-A_07 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N70BS-H-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP04N80I-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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