參數(shù)資料
型號(hào)： AP2530GY-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 30 V, 0.072 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6
文件頁(yè)數(shù)： 6/7頁(yè)
文件大?。?/td> 85K
代理商： AP2530GY-HF
AP2530GY-HF
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
0
2
4
6
8
10
02
46
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
V G = - 3.0 V
-10 V
- 7.0 V
- 5.0 V
- 4.5 V
0.6
0.9
1.2
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =-2 A
V G = -10 V
0.0
0.5
1.0
1.5
2.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
2
4
6
8
10
02
46
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10 V
- 7.0 V
- 5.0 V
-4.5 V
V G = - 3.0 V
100
200
300
400
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =-1 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
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參數(shù)描述
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