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參數(shù)資料
| 型號： | AP4420GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP4420GJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
35
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=30A
-
10
mΩ
VGS=4.5V, ID=15A
-
24
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
28
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=35V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=28V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=30A
-
16
26
nC
Qgs
Gate-Source Charge
VDS=25V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
9
-
ns
tr
Rise Time
ID=30A
-
74
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.5
-
ns
tf
Fall Time
RD=0.5Ω
-
7.7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1520
2430
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=30A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
20
-
nC
Drain-Source Avalanche Ratings
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
EAS
Drain-Source Avalanche Energy
3
ID=15A, VDD=35V, L=1mH
-
113
mJ
IAS
Drain-Source Avalanche Current
-
15
-
A
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Single Pulse Test.
2/4
AP4420GH/J
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| AP4420GH | 52 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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