參數(shù)資料
型號(hào): AP4420GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 52 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 3/4頁
文件大?。?/td> 93K
代理商: AP4420GJ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3/4
AP4420GH/J
0
20
40
60
80
100
120
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =150
o C
10V
7 .0V
5.0V
4.5 V
V G =4.0V
0
20
40
60
80
100
120
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
10V
7.0 V
5.0V
4.5 V
V G = 4.0 V
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =30A
V G =10V
0
5
10
15
20
25
30
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
0.0
10.0
20.0
30.0
40.0
50.0
0
10203040
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =10V
0
20
40
60
80
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =15A
T C =25
o C
V GS =4.5V
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