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參數(shù)資料
| 型號(hào)： | AP4425GO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 118K |
| 代理商： | AP4425GO |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V, ID=-4.0A
-
42
mΩ
VGS=-2.5V, ID=-4.0A
-
52
mΩ
VGS=-1.8V, ID=-3.0A
-
70
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.3
-
-1
V
gfs
Forward Transconductance
VDS=-5V, ID=-4A
-
4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-20V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-16V ,VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ±8V
-
±100
nA
Qg
Total Gate Charge
2
ID= -4A
-
21
34
nC
Qgs
Gate-Source Charge
VDS= -10V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS= -4.5V
-
4.4
-
nC
td(on)
Turn-on Delay Time
2
VDS= -10V
-
13
-
ns
tr
Rise Time
ID= -4A
-
39
-
ns
td(off)
Turn-off Delay Time
RG= 3.3Ω,VGS= -5V
-
24
-
ns
tf
Fall Time
RD= 2.5Ω
-72
-
ns
Ciss
Input Capacitance
VGS=0V
-
1720
2752
pF
Coss
Output Capacitance
VDS=-10V
-
275
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
215
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
Tj=25℃, IS=-0.86A, VGS=0V
-
-1.2
V
t
rr
Reverse Recovery Time
2
IS= -4A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on 1 in
2 copper pad of FR4 board t≦10s.
2/4
AP4425GO
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
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