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參數(shù)資料
| 型號(hào)： | AP4425GO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | AP4425GO |
AP4425GO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
10
30
50
70
02468
-V GS (V)
R
DS(ON)
(m
Ω
)
I D = -3.0A
T A =25
o C
0
5
10
15
20
25
30
01234
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8V
0
5
10
15
20
25
30
012345
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8 V
0.4
0.7
1.0
1.3
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = -4.0A
V G = -4.5V
0
2
4
6
8
10
0
0.4
0.8
1.2
-V SD (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(t
h)
(V
)
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