參數(shù)資料
型號(hào)： AP4523GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 40 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 1/7頁
文件大?。?/td> 133K
代理商： AP4523GM
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼
▼ Simple Drive Requirement
N-CH BVDSS
40V
▼
▼ Low On-resistance
RDS(ON)
30mΩ
▼
▼ Fast Switching Performance
ID
6.8A
▼
▼ RoHS Compliant
P-CH BVDSS
-40V
RDS(ON)
52mΩ
Description
ID
-5.1A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±10
±20
V
ID@TA=25℃
Continuous Drain Current
3
6.8
-5.1
A
ID@TA=70℃
Continuous Drain Current
3
5.4
-4.1
A
IDM
Pulsed Drain Current
1
30
-30
A
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃
/W
Data and specifications subject to change without notice
Parameter
201207051-1/7
Thermal Data
AP4523GM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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