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參數(shù)資料
| 型號(hào)： | AP4563AGH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 9.6 A, 40 V, 0.02 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | AP4563AGH-HF |
AP4563AGH-HF
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
40V
▼ Good Thermal Performance
RDS(ON)
20mΩ
▼ Fast Switching Performance
ID
9.6A
▼ RoHS Compliant & Halogen-Free
P-CH BVDSS
-40V
RDS(ON)
36m
Description
ID
-7.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
9.6
-7.3
A
ID@TA=70℃
Continuous Drain Current
3
7.7
-5.8
A
IDM
Pulsed Drain Current
1
40
-40
A
PD@TA=25℃
Total Power Dissipation
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
6
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
40
℃
/W
Data and specifications subject to change without notice
201003172
1
Parameter
Thermal Data
3.13
Halogen-Free Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G2
D2
S2
G1
D1
S1
S1
TO-252-4L
G1
S2
G2
D1/D2
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| AP4563GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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