參數(shù)資料
型號(hào)： AP4523GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 40 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 133K
代理商： AP4523GM
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
4/7
AP4523GM
0
5
10
15
20
25
30
0123
456
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
2
4
6
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
V
GS
(t
h
)(V
)
0
5
10
15
20
25
30
01
234
56
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
20
30
40
50
60
70
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS
(ON)
(m
ΩΩΩΩ
)
I D = 3A
T A =25
o C
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rm
aliz
ed
R
DS
(ON)
I D =5A
V G =10V
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