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參數(shù)資料
| 型號(hào)： | AP4527GN3 |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.7 A, 20 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, DFN-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 95K |
| 代理商： | AP4527GN3 |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=3.5A
-
35
mΩ
VGS=2.5V, ID=2A
-
52
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.3
-
1.2
V
gfs
Forward Transconductance
VDS=5V, ID=3.5A
-
3.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=16V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge
2
ID=3.5A
-
9.5
15
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=10Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
960
pF
Coss
Output Capacitance
VDS=15V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.2A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
IS=3.5A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
14
-
nC
2/7
AP4527GN3
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