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參數(shù)資料
| 型號： | AP4527GN3 |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.7 A, 20 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, DFN-8 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 95K |
| 代理商： | AP4527GN3 |
AP4527GN3
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.1
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.5A
-
65
mΩ
VGS=-2.5V, ID=-1.5A
-
100
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.3
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.5A
-
2.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-20V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-16V ,VGS=0V
-
-10
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge
2
ID=-2.5A
-
10.7
17
nC
Qgs
Gate-Source Charge
VDS=-16V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=-10V
-
9
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
32
-
ns
tf
Fall Time
RD=10Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
740
1180
pF
Coss
Output Capacitance
VDS=-15V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage
2
IS=-1.2A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
IS=-2.5A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted FR4 board, t≦5s.
3/7
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