參數(shù)資料
型號: AP4527GN3
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 4.7 A, 20 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: 3 X 3 MM, ROHS COMPLIANT, DFN-8
文件頁數(shù): 7/7頁
文件大?。?/td> 95K
代理商: AP4527GN3
65mΩ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
7/7
AP4527GN3
0
2
4
6
8
10
04
8
12
16
20
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -2.5A
V DS = -16V
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
1s
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 180℃/W
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
-10 V
D
G
S
VDS
VGS
RG
RD
0.8 x RATED VDS
TO THE
OSCILLOSCOPE
D
G
S
VDS
VGS
ID
IG
-1~-3mA
10
100
1000
10000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.02
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