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參數(shù)資料
| 型號(hào)： | AP4563AGH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 9.6 A, 40 V, 0.02 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 119K |
| 代理商： | AP4563AGH-HF |
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
20
m
VGS=4.5V, ID=5A
-
30
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=7A
-
13.5
21.6
nC
Qgs
Gate-Source Charge
VDS=32V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
7
-
ns
tr
Rise Time
ID=7A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=2.86Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
960
1540
pF
Coss
Output Capacitance
VDS=25V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.6A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
2
AP4563AGH-HF
N-CH Electrical Characteristics@ Tj=25
oC(unless otherwise specified)
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| AP4563GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP4563GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4565GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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