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參數(shù)資料
| 型號： | AP80N30W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 300 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 95K |
| 代理商： | AP80N30W |
AP80N30W
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
50
55
60
65
70
456789
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
T C =25
o C
I D =30A
0.3
0.8
1.3
1.8
2.3
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =30A
V G =10V
0
20
40
60
80
100
120
0.0
4.0
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
9.0V
8.0V
7.0V
V G =5.0V
0
10
20
30
40
50
60
0.0
4.0
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
9.0V
8.0V
7.0V
V G =5.0V
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP80N30W_10 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80T10GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80T10GR-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP8-100BLK | 制造商:JSC Wire & Cable 功能描述:Hook-Up Wire; No. of Conductors:1 |
| AP-8-11 | 功能描述:揚聲器連接器 FEMALE CABLE CONN RoHS:否 制造商:Neutrik 標準:Speakon, HPC 型式:Male 位置/觸點數(shù)量:2 端接類型: 安裝風格:PCB 方向:Vertical 觸點電鍍: 顏色: 觸點材料: 電壓額定值: 電流額定值: |
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