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參數資料
| 型號： | AP80N30W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 300 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | AP80N30W |
AP80N30W
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0
40
80
120
160
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =30A
V DS =240V
Q
VG
10V
QGS
QGD
QG
Charge
0
2000
4000
6000
8000
1
6
11
16
21
26
31
36
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this
area limited by
RDS(ON)
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP80N30W_10 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80T10GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80T10GR-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP8-100BLK | 制造商:JSC Wire & Cable 功能描述:Hook-Up Wire; No. of Conductors:1 |
| AP-8-11 | 功能描述:揚聲器連接器 FEMALE CABLE CONN RoHS:否 制造商:Neutrik 標準:Speakon, HPC 型式:Male 位置/觸點數量:2 端接類型: 安裝風格:PCB 方向:Vertical 觸點電鍍: 顏色: 觸點材料: 電壓額定值: 電流額定值: |
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