參數(shù)資料
型號： AP95U03GMT-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 90 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁數(shù)： 4/4頁
文件大?。?/td> 58K
代理商： AP95U03GMT-HF
AP95U03GMT-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
1
10
100
1000
0.01
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
0
20
406080
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =20A
V DS =15V
0
1000
2000
3000
4000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
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