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參數(shù)資料
| 型號(hào)： | AP9962GMA |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, APAK-5 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | AP9962GMA |
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP9962GMA
Q
VG
4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
0
10203040
Q G , Total Gate Charge (nC)
V
GS
,G
at
et
oS
ou
rc
eVol
tage
(V)
V DS =20V
V DS =25V
V DS =30V
I D =20A
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(pF)
f=1.0MHz
C iss
C oss
C rss
0.1
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I D
(A)
100us
1ms
10ms
100ms
DC
T C =25
o C
Single Pulse
0
20
40
60
80
024
68
V GS , Gate-to-Source Voltage (V)
I D
,D
rai
nCu
rr
en
t(A)
T j =150
o C
Tj =25
o C
V DS =5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
or
ma
liz
ed
Th
er
ma
lR
es
po
ns
e(
R
thjc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9962GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9962M | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963AGP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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