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參數(shù)資料
| 型號： | AP9965GEJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 27 A, 40 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | AP9965GEJ |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
40V
▼ Simple Drive Requirement
RDS(ON)
28mΩ
▼ Fast Switching Characteristic
ID
27A
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.0
℃
/W
Rthj-a
62.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data & specifications subject to change without notice
AP9965GEH/J
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
+16
Continuous Drain Current
27
0.25
Storage Temperature Range
Operating Junction Temperature Range
Continuous Drain Current
17
Pulsed Drain Current
1
80
-55 to 150
31.25
Total Power Dissipation
Thermal Data
Parameter
Linear Derating Factor
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
200903094
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9965GEJ)
are available for low-profile applications.
S
G
D
G
D
S
TO-251(J)
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