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參數(shù)資料
| 型號(hào)： | AP9965GEH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 27 A, 40 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | AP9965GEH |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9965GEH/J
0
1
10
100
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
ormalize
dT
h
er
mal
Re
spon
se
(
R
th
jc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
I D =18A
V DS =20V
V DS =25V
V DS =30V
10
100
1000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
0
10
20
30
40
0246
V GS , Gate-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP9965GEJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9967GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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