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參數(shù)資料
| 型號(hào)： | AP9965GEJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 27 A, 40 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | AP9965GEJ |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
AP9965GEH/J
0
20
40
60
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =150
o C
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
10V
7.0 V
5.0V
4.5 V
V G = 3.0 V
0.4
0.8
1.2
1.6
2.0
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =18A
V G =10V
0
5
10
15
20
25
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
10.0
20.0
30.0
40.0
50.0
0
1020
304050
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =10V
10
30
50
70
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =12A
T C =25
o C
V GS =4.5V
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