參數(shù)資料
型號(hào)： AP9987GJ
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 15 A, 80 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 64K
代理商： AP9987GJ
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
80
-
V
ΔBV
DSS/
ΔT
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃, I
D=1mA
-
0.09
-
V/
℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=10A
-
90
m
VGS=4.5V, ID=7A
-
105
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=10A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=125
oC) V
DS=64V ,VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS=+25V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=10A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=64V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=40V
-
8
-
ns
tr
Rise Time
ID=10A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3
Ω,V
GS=10V
-
19
-
ns
tf
Fall Time
RD=4
Ω
-3
-
ns
Ciss
Input Capacitance
VGS=0V
-
980
1570
pF
Coss
Output Capacitance
VDS=25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=10A, VGS=0V
-
1.2
V
t
rr
Reverse Recovery Time
2
IS=10A, VGS=0V,-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
44
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9987GH/J
相關(guān)PDF資料
PDF描述
AP9987GH 15 A, 80 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9987GM 3.5 A, 80 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP9997AGH-HF 8.8 A, 120 V, 0.185 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9997GH-HF 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9997GJ-HF 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9987GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9990GIF-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9990GMT-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9990GMT-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 60V 5MOHM PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 60V, 5MOHM, PMPAK5X6 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 60V, 5MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous Drain Current Id:84A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.005ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:62.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 60V, 5MOHM, PMPAK5X6, Transistor Polarity:N Channel, Continuous Dra
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