參數(shù)資料
型號： AP9987GJ
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 15 A, 80 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 4/4頁
文件大?。?/td> 64K
代理商： AP9987GJ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Qrr
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9987GH/J
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =10 A
V DS =4 0V
V DS =50 V
V DS =64 V
10
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1.0
10.0
100.0
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
DC
T C =25
o C
Single Pulse
0
10
20
30
02
46
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
Operation in this
area limited by
RDS(ON)
相關(guān)PDF資料
PDF描述
AP9987GH 15 A, 80 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9987GM 3.5 A, 80 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP9997AGH-HF 8.8 A, 120 V, 0.185 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9997GH-HF 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9997GJ-HF 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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參數(shù)描述
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AP9990GIF-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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