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參數(shù)資料
| 型號： | APL1001P |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, PPACK-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | APL1001P |
POWER MOS IV
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APL1001P
1000V
18.0A 0.60
W
HERMETIC PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
G
D
S
050-5899
Rev
-
8-2001
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1 and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL1001P
1000
18
72
±30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current 2 (V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
Drain-Source On-State Resistance
2 (V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
1000
18
0.60
25
250
±100
24
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
RQJC
RQCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.24
0.06
UNIT
°C/W
P-Pack
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