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參數(shù)資料
| 型號： | APL1001P |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 1000 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, PPACK-4 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | APL1001P |
I D
,DRAIN
CURRENT
(AMPERES)
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
C,
CAPACITANCE
(pF)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
(ON),
DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
(NORMALIZED)
VOLTAGE
(NORMALIZED)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
Crss
Coss
Ciss
050-5899
Rev
-
8-2001
20
15
10
5
0
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
.1
100S
1mS
10mS
100mS
DC
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
0
2468
0
10
20
30
40
25
50
75
100
125 150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
1
10
100
1000
.01
.1
1
10
50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20,000
10,000
5,000
1,000
500
100
NORMALIZEDTO
V
GS
= 10V @ 0.5 I
D
[Cont.]
APL1001P
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