參數(shù)資料
型號(hào): APT100GN120B2
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 245 A, 1200 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 128K
代理商: APT100GN120B2
050-7626
Re
v
A
12-2007
APT100GN120B2
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 800V
R
G
= 1.0
Ω
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,
TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,
TURN
OFF
ENERGY
LOSS
(J)
t f,
F
ALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 800V
T
J
= 25°C
, or 125°C
R
G
= 1.0
Ω
L = 100H
60
50
40
30
20
10
0
250
200
150
100
50
0
80,000
60,000
40,000
20,000
0
100,000
80,000
60,000
40,000
20,000
0
1000
800
600
400
200
0
250
200
150
100
50
0
30,000
25,000
20,000
15,000
10,000
5000
0
80,000
60,000
40,000
20,000
0
V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
Ω
10
40
70
100
130
160
190
220
10
40
70
100
130
160
190
220
10
40
70
100
130
160
190
220
10
40
70
100
130
160
190
220
10
40
70
100
130
160
190
220
10
40
70
100
130
160
190
220
0
5
10
15
20
0
25
50
75
100
125
R
G
= 1.0
Ω, L = 100H, V
CE
= 800V
R
G
= 1.0
Ω, L = 100H, V
CE
= 800V
T
J
= 25 or 125°C,V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
E
on2,
200A
E
off,
200A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
相關(guān)PDF資料
PDF描述
APT10M11JVRU2 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12067B2LL 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12067LLL 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT15GP60BDL 56 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT20M11JVR 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT100GN120B2G 功能描述:IGBT 1200V 245A 960W TMAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開(kāi)):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT100GN120J 功能描述:IGBT 1200V 153A 446W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT100GN120JDQ4 功能描述:IGBT 1200V 153A 446W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT100GN60B2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT
APT100GN60B2G 功能描述:IGBT 600V 229A 625W TMAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開(kāi)):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件