參數(shù)資料
型號: APT30GP60JDF1
元件分類: IGBT 晶體管
英文描述: 67 A, 600 V, N-CHANNEL IGBT
封裝: ISOTOP-4
文件頁數(shù): 7/9頁
文件大小: 212K
代理商: APT30GP60JDF1
050-7420
Rev
C
8-2004
TYPICAL PERFORMANCE CURVES
APT30GP60JDF1
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 84°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 30A
Forward Voltage
I
F = 60A
I
F = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.19
3.48
1.64
APT30GP60JDF1
15
20
110
DYNAMICCHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
21
-60
-65
-3
-
115
-
410
-7
-
-49
-
705
-22
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 15A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 15A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 15A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE25a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
0.913
°C/W
0.573
°C/W
0.216
°C/W
0.00132 J/
°C
0.0302 J/
°C
0.512 J/
°C
Power
(watts)
Junction
temp(
°C)
RC MODEL
Case temperature(
°C)
相關(guān)PDF資料
PDF描述
APT30GT60AR 40 A, 600 V, N-CHANNEL IGBT, TO-204AE
APT30GT60KR 64 A, 600 V, N-CHANNEL IGBT, TO-220AB
APT30GU60JU3 67 A, 600 V, N-CHANNEL IGBT
APT30M17JFLL 135 A, 300 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
APT30M19JVFR 130 A, 300 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT30GP60JDQ1 功能描述:IGBT 600V 67A 245W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT30GP60LDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GP60LDLG 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A 463W TO264 制造商:Microsemi Corporation 功能描述:IGBT 600V 100A TO-264
APT30GS60BRDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT30GS60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR