參數(shù)資料
型號: APT30N60KC6
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 5/5頁
文件大小: 144K
代理商: APT30N60KC6
IC
D.U.T.
APT30DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
Figure 19, Inductive Switching Test Circuit
Figure 17, Turn-on Switching Waveforms and Denitions
Figure 18, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
TO-220 (K) Package Outline
e3 100% Sn Plated
Source
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Drain
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
Typical Performance Curves
APT30N60KC6
050-721
1
Rev
A
8-2010
相關(guān)PDF資料
PDF描述
APT31N60SCS 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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APT31N60BCS 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT31N60BCSG 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT32GU30B 55 A, 300 V, N-CHANNEL IGBT, TO-247AD
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