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參數(shù)資料
| 型號： | APT47N65BC3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 47 A, 650 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 179K |
| 代理商： | APT47N65BC3 |
DYNAMIC CHARACTERISTICS
APT47N65BC3
050-7202
Rev
A
3-2009
SINGLE PULSE
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
47
141
1.2
580
23
6
Symbol
R
θJC
R
θ
JA
MIN
TYP
MAX
0.30
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 47A @ 25°C
RESISTIVE SWITCHING
V
GS = 13V
V
DD = 380V
I
D = 47A @ 125°C
R
G = 1.8Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V VGS = 15V
I
D = 47A, RG = 5Ω
MIN
TYP
MAX
7015
2565
210
260
29
110
18
27
110
8
670
980
1100
1200
UNIT
pF
nC
ns
μJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv
/
dt numbers reect the limitations of the test circuit rather than the
device itself. I
S = -
I
D47A ,
di/
dt = 700A/μs
V
R =
V
DSS,
T
J = 150°C
6 Eon includes diode reverse recovery. See gures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P
AV
=E
AR
*f
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -47A)
Reverse Recovery Time (I
S = -47A, dlS/dt = 100A/μs, VR = 350V)
Reverse Recovery Charge (I
S = -47A, dlS/dt = 100A/μs, VR = 350V)
Peak Diode Recovery dv/
dt
5
Peak TJ = PDM x ZθJC +TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
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