參數(shù)資料
型號： APT50GS60SR(G)
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： IGBT 晶體管
英文描述： 93 A, 600 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, D3PAK-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 605K
代理商： APT50GS60SR(G)
Symbols
Parameter
Test Conditions
Min
Typ
Max
Unit
gfs
Forward Transconductance
VCE = 50V, IC = 50A
-
31
-
S
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
-
2635
-
pF
Coes
Output Capacitance
-
240
-
Cres
Reverse Transfer Capacitance
-
145
-
Co(cr)
Reverse Transfer Capacitance
Charge Related 5
VGE = 0V
VCE = 0 to 400V
-
115
-
Co(er)
Reverse Transfer Capacitance
Current Related 6
85
Qg
Total Gate Charge
VGE = 0 to 15V
IC = 50A, VCE = 300V
-
235
-
nC
Qge
Gate-Emitter Charge
-
18
-
Ggc
Gate-Collector Charge
-
100
-
td(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
TJ = 25°C, VCC = 400V,
IC = 50A
RG = 4.7 7, VGG = 15V
-
16
-
ns
tr
Rise Time
-
33
-
td(off)
Turn-Off Delay Time
-
225
-
tf
Fall Time
-
37
-
Eon1
Turn-On Switching Energy 8
-
TBD
-
mJ
Eon2
Turn-On Switching Energy 9
-
1.2
-
Eoff
Turn-Off Switching Energy 10
-
0.755
-
td(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
TJ = 125°C, VCC = 400V,
IC = 50A
RG = 4.7 7, VGG = 15V
-
33
-
ns
tr
Rise Time
-
33
-
td(off)
Turn-Off Delay Time
-
250
-
tf
Fall Time
-
23
-
Eon1
Turn-On Switching Energy 8
-
TBD
-
mJ
Eon2
Turn-On Switching Energy 9
-
1.7
-
Eoff
Turn-Off Switching Energy 10
-
0.950
-
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250A
600
-
V
VBR(ECS)
Emitter-Collector Breakdown Voltage
VGE = 0V, IC = 1A
-
25
-
V
BR(CES)/T
J
Breakdown Voltage Temperature Coeff
Reference to 25°C, I
C = 250A
-
0.60
-
V/°C
VCE(ON)
Collector-Emitter On Voltage 4
VGE = 15V
IC = 50A
TJ = 25°C
-
2.8
3.15
V
TJ = 125°C
-
3.25
-
VEC
Diode Forward Voltage 4
IC = 50A
TJ = 25°C
-
2.15
-
TJ = 125°C
-
1.8
-
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 1mA
3
4
5
VGE(th)/TJ Threshold Voltage Temp Coeff
-
6.7
-
mV/°C
ICES
Zero Gate Voltage Collector Current
VCE = 600V,
VGE = 0V
TJ = 25°C
-
50
A
TJ = 125°C
-
TBD
IGES
Gate-Emitter Leakage Current
VGE = ±20V
-
±100
nA
Static Characteristics
TJ = 25°C unless otherwise specied
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT50GS60B_SR(G)
052-6301
Rev
A
8-2007
相關(guān)PDF資料
PDF描述
APT50GS60BRDQ2(G) 93 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GS60SRDQ2(G) 93 A, 600 V, N-CHANNEL IGBT
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APT50GT120B2RG 106 A, 1200 V, N-CHANNEL IGBT, TO-247
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GT120B2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APT50GT120B2R 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT
APT50GT120B2RDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode IGBT
APT50GT120B2RDLG 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT50GT120B2RDQ2G 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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