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參數資料
| 型號： | APT50GS60SR(G) |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, D3PAK-3 |
| 文件頁數： | 6/7頁 |
| 文件大?。?/td> | 605K |
| 代理商： | APT50GS60SR(G) |
IC
A
D.U.T.
VCE
VCC
Figure 24, Turn-off Switching Waveforms and Denitions
Figure 23, Turn-on Switching Waveforms and Denitions
Figure 22, Inductive Switching Test Circuit
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ60
FOOT NOTE:
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 224H, RG = 25, IC = 50A
3 Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C
4 Pulse test: Pulse width < 380s, duty cycle < 2%
5 Co(cr) is dened as a xed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
6 Co(er) is dened as a xed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.
7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
APT50GS60B_SR(G)
052-6301
Rev
A
8-2007
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| APT50GS60BRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
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| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2RG | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2R | 94 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相關代理商/技術參數 |
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|---|---|
| APT50GT120B2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GT120B2R | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120B2RDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode IGBT |
| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GT120B2RDQ2G | 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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