參數資料
型號: APT6013WLL
元件分類: JFETs
英文描述: 34 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA
封裝: HERMETIC SEALSED, TO-267, 3 PIN
文件頁數: 1/4頁
文件大小: 129K
代理商: APT6013WLL
TO-267
050-7369
Rev
A
11-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
APT6013WLL
600V 34A 0.160
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Hermetic TO-267 Package
Military Screening Available
POWER MOS 7 R MOSFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 17A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
600
0.160
100
500
±100
35
APT6013WLL
600
34
136
±30
±40
445
3.56
-55 to 150
300
34
50
2500
相關PDF資料
PDF描述
APT6015B2VFR 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6015B2VFRG 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6015LVFR 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT6015LVFRG 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT6015B2VFR 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
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