參數(shù)資料
型號(hào): APT6013WLL
元件分類: JFETs
英文描述: 34 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA
封裝: HERMETIC SEALSED, TO-267, 3 PIN
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 129K
代理商: APT6013WLL
APT6013WLL
050-7369
Rev
A
11-2004
5.08 (.200) BSC
1.52 (.060)
1.42 (.056)
20.45 (.805)
20.19 (.795)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.57 (.062)
1.47 (.058)
Dia. Typ.
3 Leads
20.32 (.800)
20.07 (.790)
19.05 (.750)
12.70 (.500)
24.00 (.945)
23.75 (.935)
10.29 (.405)
10.03 (.395)
Dimensions in Millimeters and (Inches)
4.27 (.168) BSC
7.16 (.282)
6.96 (.274)
16.64 (.655)
16.38 (.645)
TO-267 (W) Package
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
600
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
136
10
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Ciss
Coss
VDS=300V
VDS=120V
VDS=480V
10mS
1mS
100S
TJ =+150°C
TJ =+25°C
20,000
10,000
1,000
100
10
200
100
10
1
I
D = 34A
相關(guān)PDF資料
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