- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36721 > APT6013WLL 34 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA PDF資料下載
參數(shù)資料
| 型號(hào)： | APT6013WLL |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA |
| 封裝： | HERMETIC SEALSED, TO-267, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 129K |
| 代理商： | APT6013WLL |
Typical Performance Curves
050-7369
Rev
A
11-2004
APT6013WLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
1
23
45
6
7
8
9
10
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
-50
-25
0
25
50
75 100 125 150
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
8V
5.5V
6V
6.5V
7V
5V
VGS =15 &10V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
NORMALIZED TO
V
GS = 10V @ ID = 17A
I
D = 17A
V
GS = 10V
0.0184
0.0971
0.165
0.0045F
0.0146F
0.218F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
120
100
80
60
40
20
0
1.2
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
160
140
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6015B2VFR | 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6015B2VFRG | 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6015LVFR | 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6015LVFRG | 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6015B2VFR | 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6014DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 43A I(D) | CHIP |
| APT6014FN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 43A I(D) | SIP-TAB |
| APT6015 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6015B2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6015B2VFRG | 功能描述:MOSFET N-CH 600V 38A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。